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| BBY57... Silicon Tuning Diode Excellent linearity High Q hyperabrupt tuning diode Low series resistance High capacitance ratio Designed for low tuning voltage operation for VCO's in mobile communications equipment For control elements such as TCXOs and VCXOs 1 BBY57-02L BBY57-02V BBY57-02W BBY57-05W 3 2 D1 D2 1 2 Type BBY57-02L* BBY57-02V BBY57-02W BBY57-05W Package TSLP-2 SC79 SCD80 SOT323 Configuration single single single common cathode LS(nH) 0.4 0.6 0.6 1.4 Marking 55 5 55 D5s * Preliminary Maximum Ratings at TA = 25C, unless otherwise specified Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol VR IF Top Tstg Value 10 20 -55 ... 125 -55 ... 150 Unit V mA C 1 Mar-19-2003 BBY57... Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Reverse current VR = 8 V VR = 8 V, TA = 85 C AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 2.5 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz CT Unit max. nA typ. IR 10 100 pF 16.5 3.5 17.5 9.35 7 4.7 2.45 3.7 18.6 5.5 4.5 Capacitance ratio VR = 1 V, VR = 3 V, f = 1 MHz CT1 /CT3 CT1 /CT4 rS 3 Capacitance ratio VR = 1 V, VR = 4 V, f = 1 MHz VR = 1 V, f = 470 MHz, BBY57-02L VR = 1 V, f = 470 MHz, all others - 0.35 0.3 - 2 Mar-19-2003 Series resistance BBY57... Diode capacitance CT = f = 1MHz 40 pF (VR ) Normalized diode capacitance C(TA) /C(25C)= (TA ); f = 1MHz 1.06 - 1.04 CTA/C 25 30 1.03 1.02 1.01 4V CT 25 20 1 15 0.99 0.98 0.97 5 0.96 0.5 1 1.5 2 2.5 3 V 10 0 0 4 0.95 -30 -10 VR Temperature coefficient of the diode 10 -2 1/C TC C 10 -3 10 -4 0 0.5 1 1.5 capacitance TCc = (VR) 2 2.5 3 V 4 VR 3 1V 10 30 50 70 C 100 TA Mar-19-2003 |
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